PCDD0665G1_L2_00001
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- Description: DIODE SIL CARB 650V 6A TO252AA
- Manufacturer: PANJIT
- Length: 0 mm
- Series: 650SiC-SBD
- Product Status: Active
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 6A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Capacitance @ Vr, F: 228pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Datasheet: BRVN-PCDD0665G1_L2_00001
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- ECCN: EAR99
- HTSUS: 8541100000
