PCDP2065G1_T0_00001
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
Import Tariff May Apply
Import Tariff may apply to this part if shipping to the United States.
-
- Description: DIODE SIL CARB 650V 20A TO220AC
- Manufacturer: PANJIT
- Length: 0 mm
- Series: 650SiC-SBD
- Product Status: Active
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Current - Reverse Leakage @ Vr: 120 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 20A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Capacitance @ Vr, F: 747pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
-
- Datasheet: BRVN-PCDP2065G1_T0_00001
-
- ECCN: EAR99
- HTSUS: 8541100000
