PJD2NA1000_L2_00001
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BRVN:BRVN-PJD2NA1000_L2_00001
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MPN:PJD2NA1000_L2_00001
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MFR:
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Description:1000V N-CHANNEL MOSFET
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
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- Description: 1000V N-CHANNEL MOSFET
- Manufacturer: PANJIT
- Length: 0 mm
- Product Status: Active
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 9Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
