PJD5P10A_L2_00001
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- Description: 100V P-CHANNEL ENHANCEMENT MODE
- Manufacturer: PANJIT
- Length: 0 mm
- Product Status: Not For New Designs
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 650mOhm @ 2500A, 10V
- Vgs(th) (Max) @ Id: 2500V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 30W (Tc)
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- Datasheet: BRVN-PJD5P10A_L2_00001
