PJMH190N60E1_T0_00601
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- Description: 600V/ 190MOHM / 20.6A/ EASY TO D
- Manufacturer: PANJIT
- Length: 0 mm
- Series: SJ MOSFET Gen1
- Product Status: Active
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
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- Datasheet: BRVN-PJMH190N60E1_T0_00601
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- ECCN: EAR99
- HTSUS: 8541290000
