PJP10NA60_T0_00001
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- Description: 600V N-CHANNEL MOSFET
- Manufacturer: PANJIT
- Length: 0 mm
- Product Status: Obsolete
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 900mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1192 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
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- Datasheet: BRVN-PJP10NA60_T0_00001
