PJP4NA65H_T0_00001
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
Import Tariff May Apply
Import Tariff may apply to this part if shipping to the United States.
-
- Description: 650V N-CHANNEL MOSFET
- Manufacturer: PANJIT
- Length: 0 mm
- Product Status: Not For New Designs
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.75Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.1 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 423 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 44W (Tc)
-
- Datasheet: BRVN-PJP4NA65H_T0_00001
