PJQ1917_R1_00001
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BRVN:BRVN-PJQ1917_R1_00001
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MPN:PJQ1917_R1_00001
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MFR:
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Description:20V P-CHANNEL ENHANCEMENT MODE M
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
Import Tariff May Apply
Import Tariff may apply to this part if shipping to the United States.
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- Description: 20V P-CHANNEL ENHANCEMENT MODE M
- Manufacturer: PANJIT
- Length: 0 mm
- Product Status: Not For New Designs
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-UFDFN
- Supplier Device Package: DFN1006-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
