PJS6401_S1_00001
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- Description: 30V P-CHANNEL ENHANCEMENT MODE M
- Manufacturer: PANJIT
- Length: 0 mm
- Product Status: Active
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2500V, 10V
- Rds On (Max) @ Id, Vgs: 71mOhm @ 4.6A, 10V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
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- Datasheet: BRVN-PJS6401_S1_00001
