PJS6601_S2_00001
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- Description: 20V COMPLEMENTARY ENHANCEMENT MO
- Manufacturer: PANJIT
- Length: 0 mm
- Product Status: Not For New Designs
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
- FET Type: N and P-Channel Complementary
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 3.1A (Ta)
- Rds On (Max) @ Id, Vgs: 56mOhm @ 4.1A, 4.5V, 100mOhm @ 3.1A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V, 416pF @ 10V
- FET Feature: Standard
- Power - Max: 1250W (Ta)
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- Datasheet: BRVN-PJS6601_S2_00001
