PJW3N10A_R2_00001
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- Description: 100V N-CHANNEL ENHANCEMENT MODE
- Manufacturer: PANJIT
- Length: 0 mm
- Series: NFET-100TWMN
- Product Status: Active
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 310mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id: 2500V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
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- Datasheet: BRVN-PJW3N10A_R2_00001
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- ECCN: EAR99
- HTSUS: 8541210000
