PJW4N06A_R2_00001
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- Description: 60V N-CHANNEL ENHANCEMENT MODE M
- Manufacturer: PANJIT
- Length: 0 mm
- Series: NFET-60TWMN
- Product Status: Active
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 2500V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
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- Datasheet: BRVN-PJW4N06A_R2_00001
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- ECCN: EAR99
- HTSUS: 8541210000
