PJW7N06A_R2_00001
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BRVN:BRVN-PJW7N06A_R2_00001
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MPN:PJW7N06A_R2_00001
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MFR:
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Description:60V N-CHANNEL ENHANCEMENT MODE M
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
Import Tariff May Apply
Import Tariff may apply to this part if shipping to the United States.
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- Description: 60V N-CHANNEL ENHANCEMENT MODE M
- Manufacturer: PANJIT
- Length: 0 mm
- Series: NFET-60TWMN
- Product Status: Active
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2500V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Tc)
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- ECCN: EAR99
- HTSUS: 8541210000
