PSMB055N08NS1_R2_00601
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- Description: 80V/ 5.5MOHM / MV MOSFET
- Manufacturer: PANJIT
- Length: 0 mm
- Series: MV SGT Gen.2
- Product Status: Active
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 7 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4773 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 113.6W (Tc)
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- Datasheet: BRVN-PSMB055N08NS1_R2_00601
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- ECCN: EAR99
- HTSUS: 8541290000
