PSMP050N10NS2_T0_00601
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- Description: 100V/ 5MOHM/ LOW FOM MOSFET
- Manufacturer: PANJIT
- Length: 0 mm
- Series: MV SGT Gen.2
- Product Status: Active
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB-L
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3910 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 138W (Tc)
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- Datasheet: BRVN-PSMP050N10NS2_T0_00601
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- ECCN: EAR99
- HTSUS: 8541290000
